Phase locked diode laser array

Patent · Tue Jan 26 04:00:00 EST 1988

OSTI ID:5449001

Randolph, D B; Gordon, E I

A semiconductor laser diode array is described comprising: a substrate, layers fabricated on the substrate, the layers including an active layer capable of emitting radiation when a pumping current is applied thereto, the active layer terminating in first and second end facets, contact means for applying the pumping current, a first set of parallel spaced apart active waveguides defined in the active layer, the first set of active waveguides extending from the first end facet and terminating before the second end facet, a second set of parallel spaced apart active waveguides defined in the active layer, the second set of active waveguides extending from the second end facet and terminating before the first end facet, the first and second sets of active waveguides being interdigitated with one another in a coupling region wherein there is optical coupling between adjacent active waveguides in the first and second sets, the coupling providing feedback paths for supporting laser oscillations in the first and second sets of active waveguides, the threshold current for lasing being lowest when all of the active waveguides in the first and second sets oscillate in phase.

• Assignee: Lytel Inc., Somerville, NJ
• Patent Number(s): US 4722089
• OSTI ID: 5449001
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
BEAM DYNAMICS
COUPLINGS
DESIGN
FEEDBACK
LASERS
MODE LOCKING
OPERATION
OSCILLATIONS
PHASE OSCILLATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
WAVEGUIDES