Phase-locked arrays of coupled X-junctions
Patent
·
OSTI ID:5630511
This patent describes a semiconductor laser array structure. It comprises means for producing lasing action in a semiconductor structure, including a substrate, an active semiconductor layer, electrodes for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, located at opposite ends of the array structure; and an array of waveguides with generally parallel longitudinal axes, the waveguides having a first set of parallel elements extending from one end of the structure to an intermediate region and a second set of parallel elements aligned with the first set and extending from the intermediate region to the other end of the structure, wherein each adjacent pair of the waveguides in the first set of parallel elements is coupled to an aligned pair of the waveguides in the second set of parallel elements, by an X-shaped junction located in the intermediate region and configured to provide significant losses for the 0{degrees}-phase-shift array mode and thereby discriminate against 0{degrees}-phase-shift array mode operation, whereby the laser array structure operates in the 180{degrees}-phase-shift array mode and produces a diffraction-limited beam at high output powers and drive currents substantially above threshold.
- Assignee:
- TRW Inc., Redondo Beach, CA (United States)
- Patent Number(s):
- A; US 5050180
- Application Number:
- PPN: US 7-419289
- OSTI ID:
- 5630511
- Country of Publication:
- United States
- Language:
- English
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