Laser array with wide-waveguide coupling region
This patent describes a semiconductor laser array structure. It comprises: means for producing lasing action in the structure, including a substrate, an active semiconductor layer, electrodes for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, located at opposite ends of the array structure; a first set of waveguides with parallel longitudinal axes; a second set of waveguides with a parallel longitudinal axes; a wide-waveguide section, having first and second ends coupled to the first and second sets of waveguides, respectively, having a length sufficient to support a single lateral mode in the side-waveguide section, and having a width at the first end approximately equal to the overall width of the first set of waveguides and a width at the second end approximately equal to the overall width of the second set of wavelengths; and wherein the individual waveguides in one set are not colinear with the waveguides in the other set.
- Assignee:
- TRW Inc., Redondo Beach, CA
- Patent Number(s):
- US 4852113
- Application Number:
- PPN: US 6921648A
- OSTI ID:
- 5446163
- Country of Publication:
- United States
- Language:
- English
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