Phased-locked array of semiconductor lasers using closely spaced antiguides
This paper describes a semiconductor laser array structure. It comprises: means for producing lasing action in a semiconductor structure, including a substrate, an active semiconductor layer, electrodes for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, located at opposite ends of the array structure; and an array of closely spaced negative-index waveguides with parallel longitudinal axes, formed in the structure and defined by parallel waveguide elements having a selected refractive index, and semiconductor structural means between the waveguide elements to provide interelement regions of higher refractive index than the waveguide elements, whereby optical confinement between waveguide elements is relatively low, to suppress lasing between elements, but coupling between elements is strong, to provide stable, phase-locked operation.
- Assignee:
- NOV; NOV-89-083125; EDB-90-010402
- Patent Number(s):
- US 4860298
- Application Number:
- PPN: US 7-180415A
- OSTI ID:
- 5259395
- Country of Publication:
- United States
- Language:
- English
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