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Rapid thermal annealing of sol-gel derived lead zirconate titanate thin films

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.350789· OSTI ID:7048205
; ; ;  [1]
  1. Materials Research Laboratory, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

Sol-gel derived ferroelectric thin films of lead zirconate titanate have been annealed through the rapid thermal annealing (RTA) technique to investigate the effect of various annealing temperature-time combinations. Crystallization of the film into the perovskite phase required 10 s at 600 {degree}C and a mere 1 s at 700 {degree}C. Rapid thermally annealed films recorded weak-field permittivities greater than 1000, dissipation losses of 0.02--0.05, maximum remanent polarization of 29 {mu}C/cm{sup 2}, and coercive field around 40 kV/cm. RTA films are distinguished by superior breakdown strengths, and morphologically smoother surfaces. The frequency dependent dielectric constants have been discussed in terms of a lumped circuit model.

OSTI ID:
7048205
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 71:9; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English