Structural and electrical properties of PLZT films on ITO-coated glass prepared by a sol-gel process[Lead Lanthanum Zirconium Titanates, Indium Tin Oxides]

Journal Article · Thu Jul 01 04:00:00 EDT 1999 · Materials Research Bulletin

DOI:https://doi.org/10.1016/S0025-5408(99)00136-1· OSTI ID:20006466

Jang, N W; Mah, S B; Paik, D S; Choi, H W; Park, C Y

PLZT films prepared by a sol-gel process were fabricated on indium tin oxide (ITO)-coated glass substrates using rapid thermal annealing (RTA). The films crystallized into the perovskite phase when annealed at 750 C for 5 min. X-ray diffraction (XRD) and Raman spectroscopy results indicate that the morphotropic phase boundary of PLZT films shifts toward the Ti-rich side, in contrast to that of bulk ceramics. A dielectric constant of 1,270 for the 2/55/45 composition was the maximum value observed. With increasing Zr content in the 2 mol% La modified films, the coercive field decreased from 52.9 to 30 kV/cm and the remanent polarization increased from 22.7 to 50.6 {micro}C/cm{sup 2}. Optical transmittance increased by increasing optical isotropy as the Zr content increased.

• Research Organization: Yonsei Univ., Seoul (KR)
• OSTI ID: 20006466
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 9 Vol. 34; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL PROPERTIES
LANTHANUM OXIDES
LEAD OXIDES
MICROSTRUCTURE
RAMAN SPECTROSCOPY
SOL-GEL PROCESS
THIN FILMS
TITANIUM OXIDES
X-RAY DIFFRACTION
ZIRCONIUM OXIDES