Deposition of sol-gel derived lanthanum zirconate titanate thin films on copper substrates.

Journal Article · Mon Jun 23 04:00:00 UTC 2008 · Appl. Phys. Lett.

DOI:https://doi.org/10.1063/1.2945887· OSTI ID:935666

Narayanan, M; Kwon, D K; Ma, B; Balchandran, U

Lead lanthanum zirconate titanate (PLZT) thin films were directly deposited on copper substrates by chemical solution deposition and crystallized at temperatures of {approx_equal} 650 C under low pO{sub 2} conditions. Although the crystallization conditions used are conducive for copper oxidation, a thin layer ({approx}115 nm) of PLZT was sufficient to protect the underlying copper from oxidation. Films exhibited well saturated hysteresis loops with remanent polarization {approx}24 {micro}C/cm{sup 2} and dielectric constants {approx}730. Indirect evidence suggests that the oxygen vacancies created during the high temperature processing are responsible for the degradation of the electrical properties of these thin films. Techniques for avoiding this problem are proposed.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: EE
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 935666
• Report Number(s): ANL/ES/JA-61556
• Journal Information: Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: Jun. 23, 2008 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
COPPER
CRYSTALLIZATION
DEPOSITION
ELECTRICAL PROPERTIES
LANTHANUM OXIDES
PERMITTIVITY
SOL-GEL PROCESS
SUBSTRATES
THIN FILMS
TITANIUM OXIDES
VACANCIES
ZIRCONIUM OXIDES