Integration of PLZT and BST family oxides with GaN[Lead Lanthanum Zirconate Titanate, Barium Strontium Titanate]
Recent advances in the processing of complex-oxide materials has allowed the authors to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al{sub 2}O{sub 3} in a thickness range of 0.3--5 {micro}m by a sol-gel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5 {center_dot} 10{sup {minus}8} A/cm{sup 2}.
- Research Organization:
- NZ Applied Technologies, Woburn, MA (US)
- OSTI ID:
- 20104531
- Resource Relation:
- Conference: 1999 Materials Research Society Fall Meeting, Boston, MA (US), 11/28/1999--12/03/1999; Other Information: PBD: 2000; Related Information: In: GaN and related alloys -- 1999. Materials Research Society symposium proceedings, Volume 595, by Myers, T.H.; Feenstra, R.M.; Shur, M.S.; Amano, Hiroshi [eds.], [1050] pages.
- Country of Publication:
- United States
- Language:
- English
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