Oriented bismuth titanate sol-gel films for NDRO ferroelectric memories

Conference · Sun Dec 31 04:00:00 EST 1995

OSTI ID:175517

Fuierer, P; Sun, S; Liu, L ^[1]

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1. New Mexico Institute of Technology, Socorro, NM (United States)

Bismuth titanate Bi{sub 4}Ti{sub 3}O{sub 12} (BIT) is a ferroelectric with a layered structure which exhibits the polarization-electric field (P-E) switching behavior necessary for memory applications in bulk ceramic form, but has not been studied in thin film form to the extent that Pb(Zr,Ti)O{sub 3} has. BIT offers the favorable characteristics of higher Curie temperature (and thus higher temperature resistance and/or operation) and lower strains associated with the switching of polarization. Highly c-axis oriented BIT films have been successfully prepared by a polymeric sol-gel spin-on technique. Properties include a dielectric constant of 154, remanent polarization of 5 {mu}C/cm{sup 2}, and coercive field of 90 KV/cm. The key to highly textured films is proper aging of the precursor solution.

• OSTI ID: 175517
• Report Number(s): CONF-9410372--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH COMPOUNDS
DIELECTRIC PROPERTIES
FILMS
POLARIZATION
STRAINS
SYNTHESIS
TIME DEPENDENCE
TITANATES
VISCOSITY