Infrared photodetection using a-Si:H photodiodes
Journal Article
·
· IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)
- NTT Interdisciplinary Research Labs., Tokyo (Japan)
It is experimentally demonstrated for the first time that an a-Si:H photodiode with reach-through structure can detect infrared light of 1.31 [mu]m and 1.55 [mu]m. A maximum gain-quantum efficiency product of 0.58 is obtained at a reverse bias of [minus]10 V under 100 [mu]W illumination at 1.31 [mu]m. This value of gain-quantum efficiency product is comparable to the quantum efficiency of a non-gain-enhanced a-Si:H pin photodiode at visible wavelengths.
- OSTI ID:
- 7046820
- Journal Information:
- IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 6:3; ISSN 1041-1135; ISSN IPTLEL
- Country of Publication:
- United States
- Language:
- English
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