A near infrared organic photodiode with gain at low bias voltage

Campbell, Ian H; Crone, Brian K

doi:10.1063/1.3279133

A near infrared organic photodiode with gain at low bias voltage

Journal Article · Thu Jan 01 04:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3279133· OSTI ID:972052

Campbell, Ian H ^[1]; Crone, Brian K ^[1]

Los Alamos National Laboratory

We demonstrate an organic photodiode with near infrared optical response out to about 1100 run with a gain of {approx}10 at 1000 run under 5V reverse bias. The diodes employ a soluble naphthalocyanine with a peak absorption coefficient of {approx}10{sup 5} cm{sup -1} at 1000 nm. In contrast to most organic photodiodes, no exciton dissociating material is used. At zero bias, the diodes are inefficient with an external quantum efficiency of {approx} 10{sup -2}. In reverse bias, large gain occurs and is linear with bias voltage above 4V. The observed gain is consistent with a photoconductive gain mechanism.

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Research Organization:: Los Alamos National Laboratory (LANL)

Sponsoring Organization:: DOE

DOE Contract Number:: AC52-06NA25396

OSTI ID:: 972052

Report Number(s):: LA-UR-09-06513; LA-UR-09-6513

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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A near infrared organic photodiode with gain at low bias voltage

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