Charge collection in a-Si:H/a-Si{sub 1-x}C{sub x} multilayers photodetectors
Conference
·
OSTI ID:10157054
- Lawrence Berkeley Lab., CA (United States)
- Barcelona Univ. (Spain). Dept. de Fisica Aplicada i Electronica
Amorphous semiconductors have been used as thin film transistor(TFT), solar cell, phototransistors. In this paper we study the charge collected properties of a-Si:H/a-Si{sub 1-x}C:H{sub x} multilayer pin photodiode. In a-Si:H pin photodiode, the photogenerated carriers can be totally collected under strong electric field under reverse bias. However, our measurements show that in the a-Si:H/a-Si{sub l-x}C:H{sub x} multilayer pin photodiode photogenerated electrons and holes drift toward the electrodes under a certain bias, the total collected charge shows no saturation with bias and exhibits a continuous increase with reverse bias. We classify that the device works at two regions. In Region 1, the device behaves like a photodiode. This charge collection efficiency drop from theoretical value may indicate charge capture or confinement at the interfaces and trapping at the a-Si:H potential wells. These charges trapped or confined can be released at the interface and quantum well at higher electric field. In Region 2, above a critical bias voltage, the device works as a breakdown diode with a series photosensitive resistor which contributes higher collection efficiency, namely optical gain greater than unity.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10157054
- Report Number(s):
- LBL--35474; CONF-9404171--1; ON: DE94013107
- Country of Publication:
- United States
- Language:
- English
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