Optical absorption of amorphous-Si:H/amorphous-Si/sub x/N/sub 1-//sub x/:H multilayers: Effects of interface alloying

Journal Article · Fri Jan 15 04:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340266· OSTI ID:5529637

Mui, K; Smith, F W

A model for the optical absorption of a-Si:H/a-Si/sub x/N/sub 1-//sub x/ :H multilayers has been developed which takes into account the effects of alloying in the interface regions between the a-Si:H and a-Si/sub x/N/sub 1-//sub x/ :H layers. Four different spatial variations of the film composition at the interfaces have been considered: abrupt, step, linear, and parabolic. The optical response of the interface regions is proposed to arise from Si-centered tetrahedra, containing both Si and N atoms. Calculations of the dielectric function of the multilayer using the appropriate effective medium approximation have indicated that alloying at the interfaces leads to a lower optical absorption and a broadening of the multilayer absorption edge as compared to multilayers in which interface alloying is ignored. However, interface alloying apparently does not contribute appreciably to the observed increase in the optical energy gap of the a-Si:H layer in the limit of decreasing layer thickness.

• Research Organization: Department of Physics, City College of the City University of New York, New York, New York 10031
• OSTI ID: 5529637
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
DIELECTRIC PROPERTIES
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY GAP
INTERFACES
LAYERS
NITRIDES
NITROGEN COMPOUNDS
OPACITY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES