Blue-enhanced thin-film photodiode for dual-screen x-ray imaging

Journal Article · Mon Dec 28 04:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3276288· OSTI ID:21347368

Vygranenko, Y; Vieira, M ^[1]; Sazonov, A ^[2]; Heiler, G; Tredwell, T ^[3]; Nathan, A ^[4]

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1. Department of Electronics, Telecommunications and Computer Engineering, ISEL, Lisbon 1949-014 (Portugal)
2. Electrical and Computer Engineering, University of Waterloo, Waterloo N2L 3G1 (Canada)
3. Carestream Health, Inc., Rochester, New York 14652-3487 (United States)
4. London Centre for Nanotechnology, University College London, London WC1H 0AH (United Kingdom)

This article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of 900 pA/cm{sup 2} and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored p-layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional a-Si:H n-i-p photodiode.

• OSTI ID: 21347368
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 95; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
CRYSTALS
CURRENT DENSITY
DOPED MATERIALS
EFFICIENCY
ELECTROMAGNETIC RADIATION
ELEMENTS
FILMS
ILLUMINANCE
IONIZING RADIATIONS
LAYERS
MATERIALS
NANOSTRUCTURES
PHOTODIODES
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
SORPTION
THIN FILMS
WAVELENGTHS
X RADIATION