Orientation selection by zone-melting silicon films through planar constrictions

Journal Article · Fri Oct 15 04:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93664· OSTI ID:7044908

Atwater, H A; Smith, H I; Geis, M W

Recrystallization of encapsulated Si films on SiO/sub 2/ by zone-melting produces films composed of several grains approximately 1 mm wide and extending the length of the scan. Within grains there are sub-boundaries. We report a technique for producing recrystallized Si films of a single orientation. The technique consists of patterning polysilicon with a narrow, planar constriction and passing a molten zone through it so that only one orientation propagates beyond the constriction. We also show that sub-boundaries can be eliminated in the constriction.

• Research Organization: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
• OSTI ID: 7044908
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CHALCOGENIDES
CRYSTAL STRUCTURE
CRYSTALS
DATA
ELEMENTS
EXPERIMENTAL DATA
FILMS
GRAIN BOUNDARIES
GRAIN SIZE
INFORMATION
MELTING
MICROSTRUCTURE
NUMERICAL DATA
ORIENTATION
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
POLYCRYSTALS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SIZE
ZONE MELTING