Orientation filtering by growth-velocity competition in zone-melting recrystallization of silicon on SiO/sub 2/

Journal Article · Thu Dec 15 04:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94255· OSTI ID:6460558

Atwater, H A; Thompson, C V; Smith, H I; Geis, M W

We describe a method of controlling the in-plane <100> directions of grains in (100)-textured silicon films produced by zone-melting recrystallization over amorphous SiO/sub 2/. Grains having in-plane orientation within a narrow range are able to grow through an orientation filter consisting of a pattern of crystallization barriers, while grains having other orientations are occluded. The results of experiments using an orientation filter, and the parameters which optimize filter performance, are reported.

• Research Organization: Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
• OSTI ID: 6460558
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure &amp; Phase Studies
AMORPHOUS STATE
CHALCOGENIDES
CRYSTAL STRUCTURE
ELEMENTS
FILMS
FILTERS
GRAIN ORIENTATION
MELTING
MICROSTRUCTURE
MINERALS
OPTIMIZATION
ORIENTATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
RECRYSTALLIZATION
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
ZONE MELTING