Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

Journal Article · Mon Nov 28 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2138795· OSTI ID:20706444

Saenger, K L; Souza, J.P. de; Fogel, K E; Ott, J A; Reznicek, A; Sung, C Y; Sadana, D K; Yin, H ^[1]

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1. IBM Semiconductor Research and Development Center, Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

We demonstrate that the crystal orientation of single-crystal silicon layers may be changed in selected areas from one orientation to another by an amorphization/templated recrystallization (ATR) process, and then introduce ATR as an alternative approach for fabricating planar hybrid orientation substrates with surface regions of (100)- and (110)-oriented Si. The ATR technique, applied to a starting substrate comprising a thin (50-200 nm) overlayer of (100) or (110) Si on a (110) or (100) Si handle wafer, consists of two process steps: (i) Si{sup +} or Ge{sup +} ion implantation to create an amorphous silicon (a-Si) layer extending from the top of the overlayer to a depth below the overlayer/handle wafer interface, and (ii) a thermal anneal to produce the handle-wafer-templated epitaxial recrystallization of the a-Si layer. Regions exposed to the ATR process assume the orientation of the handle wafer while regions not exposed to the ATR process retain their original orientation. The practicality of this approach is demonstrated with the fabrication of a planar hybrid orientation substrate comprising (100) and (110) Si regions separated by SiO{sub 2}-filled trenches.

• OSTI ID: 20706444
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ANNEALING
CRYSTAL GROWTH
EPITAXY
GERMANIUM IONS
GRAIN ORIENTATION
INTERFACES
ION IMPLANTATION
LAYERS
MONOCRYSTALS
RECRYSTALLIZATION
SEMICONDUCTOR MATERIALS
SILICON
SILICON IONS
SILICON OXIDES
SUBSTRATES
SURFACES