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U.S. Department of Energy
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Method for making circular tubular channels with two silicon wafers

Patent ·
OSTI ID:403669

A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si{sub 3}N{sub 4}) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO{sub 3}/CH{sub 3}COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary. 11 figs.

Research Organization:
University of California
DOE Contract Number:
W-7405-ENG-48
Assignee:
Univ. of California, Oakland, CA (United States)
Patent Number(s):
US 5,575,929/A/
Application Number:
PAN: 8-464,020
OSTI ID:
403669
Country of Publication:
United States
Language:
English

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