Narrow stripe AlGaAs lasers using double current confinement

Journal Article · Sun Nov 14 23:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93349· OSTI ID:7043983

Blauvelt, H; Margalit, S; Yariv, A

Gain guided AlGaAs lasers in which the current is restricted to flow between two narrow stripes have been fabricated. The double current confinement configuration, which is fabricated by a selective meltback-growth technique, enables the current injection to be restricted to a very narrow section of the active layer. These lasers exhibit very strong antiguiding and operate in many longitudinal modes, which are characteristics of narrow stripe lasers. Potential applications of the twin vertical stripe configuration include arrays of optically coupled lasers and, if a real index waveguiding mechanism can be combined with double current confinement, low threshold lasers.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 7043983
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
CONFINEMENT
CRYSTAL GROWTH
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LAYERS
MELTING
NUMERICAL DATA
OSCILLATION MODES
PHASE TRANSFORMATIONS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS