Optical stability of narrow stripe, proton-isolated AlGaAs double heterostructure lasers with gain guiding

Journal Article · Thu Sep 01 00:00:00 EDT 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94379· OSTI ID:5748085

Salemink, H W.M.; Biesterbos, J W.M.

Optically stable, proton-isolated, gain-guided (AlGa)As double heterostructure injection lasers are described. A narrow stripe width (3.5 ..mu..m) and a very shallow implantation are employed (1.3 ..mu..m from the active layer); this results in a cosh/sup -2/-like optical mode of approx.9.0-..mu..m full width at half-maximum. The far-field profiles possess strong sidelobes at high optical output power. The optical material loss coefficient and the antiguiding parameter are derived from the measured far-field profiles, using the theory of gain guiding. Key parameters in the description of the optical mode distribution are calculated for several values of output power.

• Research Organization: Philips Research Laboratories, 5600 MD Eindhoven, The Netherlands
• OSTI ID: 5748085
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CATIONS
CHARGED PARTICLES
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
ION IMPLANTATION
IONS
LASERS
OPTICAL MODES
OSCILLATION MODES
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY