Phase locked narrow zinc diffused stripe laser arrays

Journal Article · Mon May 26 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96928· OSTI ID:5881678

Zmudzinski, C A; Mawst, L J; Givens, M E; Emanuel, M A; Coleman, J J

Phase locked operation of an array of narrow diffused stripe conventional double heterostructure laser elements grown by metalorganic chemical vapor deposition is reported. Six-element arrays (length 356 ..mu..m) show threshold currents of 33 mA per stripe and peak power outputs of at least 160 mW per facet with total external differential quantum efficiencies of 33%. Complex near-field patterns are shown which result from two opposing mechanisms involved in guiding of the lateral modes. Three major lobes in far-field patterns, which correspond to expected patterns for the lateral modes of gain guided arrays, are described.

• Research Organization: Compound Semiconductor Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 5881678
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:21; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COUPLING
CRYSTAL DOPING
CURRENTS
DATA
DEPOSITION
DIFFUSION
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
METALS
NEUTRAL-PARTICLE TRANSPORT
NUMERICAL DATA
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
POWER
POWER RANGE MILLI W
QUANTUM EFFICIENCY
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT
ZINC