Phase-locked shallow mesa graded barrier quantum well laser arrays

Journal Article · Mon May 19 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96953· OSTI ID:5725159

Mawst, L J; Givens, M E; Emanuel, M A; Zmudzinski, C A; Coleman, J J

Graded barrier quantum well heterostructures have been grown by metalorganic chemical vapor deposition and processed into real index-guided shallow mesa laser arrays. Single-stripe devices have threshold currents as low as 14 mA (533 ..mu..m length) and ten-element arrays have threshold currents as low as 9 mA per stripe with 52% differential quantum efficiency. These arrays operate phase locked with sharp double-lobed far-field patterns up to 1.75 times threshold current.

• Research Organization: Compound Semiconductor Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 5725159
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:20; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHASE SHIFT
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT