High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array
Data are presented on high-power strained-layer InGaAs quantum well heterostructure laser arrays. These devices are periodic nonplanar arrays, formed by a single metalorganic chemical vapor deposition growth over a selectively etched corrugated GaAs substrate. The corrugation serves to provide both stripe definition and index guiding while suppressing lateral lasing perpendicular to the stripes. Maximum pulsed optical powers of 2.5 W/facet (width = 1600 ..mu..m, length = 440 ..mu..m) for an emission wavelength of 1.03 ..mu..m have been obtained from uncoated devices having threshold current densities in the range 290--600 A/cm/sup 2/. Far-field radiation patterns indicate that the arrays are phase locked.
- Research Organization:
- NSF Engineering Research Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois at Urbana--Champaign, 1406 West Green Street, Urbana, Illinois 61801
- OSTI ID:
- 7199831
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:6; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
High-power pulsed operation of an optimized nonplanar corrugated substrate periodic laser diode array
Nonplanar index-guided quantum well heterostructure periodic laser array
Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT