High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array
Data are presented on high-power strained-layer InGaAs quantum well heterostructure laser arrays. These devices are periodic nonplanar arrays, formed by a single metalorganic chemical vapor deposition growth over a selectively etched corrugated GaAs substrate. The corrugation serves to provide both stripe definition and index guiding while suppressing lateral lasing perpendicular to the stripes. Maximum pulsed optical powers of 2.5 W/facet (width = 1600 ..mu..m, length = 440 ..mu..m) for an emission wavelength of 1.03 ..mu..m have been obtained from uncoated devices having threshold current densities in the range 290--600 A/cm/sup 2/. Far-field radiation patterns indicate that the arrays are phase locked.
- Research Organization:
- NSF Engineering Research Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1406 West Green Street, Urbana, Illinois 61801
- OSTI ID:
- 7199831
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 53:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
POWER
THRESHOLD CURRENT
CURRENT DENSITY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
OPERATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)