High-power nonplanar quantum well heterostructure periodic laser arrays

Journal Article · Mon Sep 26 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100044· OSTI ID:6842016

Givens, M E; Zmudzinski, C A; Bryan, R P; Coleman, J J

Optical pulsed powers of 8 W from a single uncoated facet and low (<200 A/cm/sup 2/) threshold current densities have been obtained from 3.1-mm-wide (cavity length = 483 ..mu..m) nonplanar periodic quantum well heterostructure laser diode arrays grown by metalorganic chemical vapor deposition over a selectively etched corrugated substrate. The resulting nonplanar lateral active layer profile provides index guiding and suppresses lateral lasing regardless of device width.

• Research Organization: Department of Electrical and Computer Engineering and NSF Engineering Research Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, 1406 West Green Street, Urbana, Illinois 61801
• OSTI ID: 6842016
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 53:13
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
FABRICATION
THRESHOLD CURRENT
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
GALLIUM ARSENIDES
HETEROJUNCTIONS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
JUNCTIONS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
420300* - Engineering- Lasers- (-1989)