Nonplanar index-guided quantum well heterostructure periodic laser array

Journal Article · Mon Aug 01 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99911· OSTI ID:6973668

Zmudzinski, C A; Givens, M E; Bryan, R P; Coleman, J J

Data are presented on nonplanar index-guided quantum well heterostructure periodic laser arrays grown by metalorganic chemical vapor deposition (MOCVD). The nonplanar array structure, formed by a single MOCVD growth over a selectively etched corrugated substrate, not only provides index guiding for the individual array elements, but also suppresses lateral lasing and amplified spontaneous emission for the entire array. As a result, the entire width of the device is utilized for optical emission, and no additional processing steps are required. Devices tested exhibit uniform emission and show no signs of lateral lasing or amplified spontaneous emission for array widths up to 3.3 times the cavity length. The processing required for device fabrication is therefore minimized by taking advantage of the properties of MOCVD growth over nonplanar substrates.

• Research Organization: Department of Electrical and Computer Engineering and NSF Engineering Research Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana--Champaign, 1406 West Green Street, Urbana, Illinois 61801
• OSTI ID: 6973668
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DESIGN
EMISSION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
LAYERS
PHOTON EMISSION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING