Trapezoidal channeled substrate inner stripe phase-locked semiconductor laser arrays
Journal Article
·
· Journal of Applied Physics; (USA)
- Department of Electronics Science, Jilin University, Changchun, People's Republic of China (CN)
A novel type of trapezoidal channeled substrate inner stripe diode laser array grown by single-step liquid-phase epitaxy was designed and fabricated. A six-element array with evanescent wave coupling, as well as leaky wave coupling, shows a continuous-wave threshold current of 170 mA and a pulsed peak power over 675 mW per facet without a coating. A clean single-lobe far-field pattern of beam width 2.4{degree} is obtained.
- OSTI ID:
- 5669358
- Journal Information:
- Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 66:11; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Terraced substrate inner stripe visible semiconductor
Phase locked narrow zinc diffused stripe laser arrays
Two-stage injection locking of high-power semiconductor arrays
Journal Article
·
Wed Feb 28 23:00:00 EST 1990
· IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:6779345
Phase locked narrow zinc diffused stripe laser arrays
Journal Article
·
Mon May 26 00:00:00 EDT 1986
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5881678
Two-stage injection locking of high-power semiconductor arrays
Journal Article
·
Sun Jul 01 00:00:00 EDT 1990
· Optics Letters; (USA)
·
OSTI ID:6714783