Terraced substrate inner stripe visible semiconductor

Journal Article · Wed Feb 28 23:00:00 EST 1990 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:6779345

Du, G; Zhang, X; Zhao, F; Gao, D ^[1]

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1. Dept. of Electronics Science, Jilin Univ., Changchun (CN)

A new structure for semiconductor lasers, the terraced substrate inner stripe (TSIS) laser and its arrays are reported with very simple fabrication processes. The lasers, emitting in the range of 7500--7800 {angstrom}, have average current thresholds of 30--40 mA and maintain single transverse mode operation up to 20 mW. The life tests show that the new type lasers have almost no threshold change after 3000 h aging at 4 mW CW operation. The TSIS laser arrays have clean single-lobe far-field patterns with full width at half power of 6{degrees} in CW operation and 2.4{degrees} in pulsed operation.

• OSTI ID: 6779345
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA) Vol. 26:3; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
FABRICATION
FAR INFRARED RADIATION
FREQUENCY MODULATION
INFRARED RADIATION
IRRADIATION
LASERS
MODULATION
PULSED IRRADIATION
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT