Visible GaAlAs V-channeled substrate inner stripe laser with stabilized mode using p-GaAs substrate

Journal Article · Sun Feb 28 23:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93107· OSTI ID:5722657

Yamamoto, S; Hayashi, H; Yano, S; Sakurai, T; Hijikata, T

A new visible laser, the V channeled substrate inner stripe laser, is developed. This laser can internally confine the current into the V-channel by using a thin n-GaAs layer grown on the p-GaAs substrate. cw threshold currents were 35--45 mA in the visible spectral range of 770--790 nm. And highly stable transverse and single longitudinal mode operation were observed because the built-in optical waveguide was formed within the V channel.

• Research Organization: Central Research Laboratories, Sharp Corporation, Tenri, Nara 632, Japan
• OSTI ID: 5722657
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONFINEMENT
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LAYERS
MATERIALS
N-TYPE CONDUCTORS
NUMERICAL DATA
OSCILLATION MODES
P-TYPE CONDUCTORS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
STABILIZATION
SUBSTRATES
VISIBLE RADIATION
WAVEGUIDES