High output power characteristics in broad-channeled substrate inner stripe lasers

Journal Article · Thu Feb 14 23:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95616· OSTI ID:6101752

Yamamoto, S; Miyauchi, N; Maei, S; Morimoto, T; Yamamoto, O; Yano, S; Hijikata, T

A high output power AlGaAs laser is newly developed in the spectral range of 770--780 nm. The laser has a double-depth channel on the p-GaAs substrate which forms a built-in optical waveguide having a double effective refractive index/loss step. This novel waveguide is effective to make the fundamental lateral mode extremely stable; that is, up to 60 mW when the reflectivity of the front facet (R/sub f/) is 0.12, and 100 mW when R/sub f/ is 0.04. cw threshold currents are 35--45 mA and external differential efficiencies are 0.6--0.8 mW/mA. Also, an astigmatic distance below 3 ..mu..m is obtained when R/sub f/ is more than 0.10.

• Research Organization: Central Research Laboratories, Sharp Corporation, Tenri, Nara 632, Japan
• OSTI ID: 6101752
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
DESIGN
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
INFRARED RADIATION
LASERS
LIFETIME
NEAR INFRARED RADIATION
NUMERICAL DATA
OPTICAL PROPERTIES
PERFORMANCE
PHYSICAL PROPERTIES
PNICTIDES
POWER
RADIATIONS
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE PROPERTIES
THRESHOLD CURRENT
WAVEGUIDES