AlGaAs/GaAs melt-etched inner stripe laser diode with self-aligned structure

Journal Article · Sat Jun 01 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95798· OSTI ID:5865915

Watanabe, A; Yamada, T; Imanaka, K; Horikawa, H; Kawai, Y; Sakuta, M

A novel liquid phase epitaxy (LPE) used to fabricate a channeled stripe AlGaAs/GaAs laser diode emitting at 780 nm with a self-aligned structure is reported. In the present method, only two-step LPE and a conventional wet chemical etching are required. The inner stripe, 4 ..mu..m wide, is grooved by a newly developed preferential melt-etching technique during crystal growth without exposure of the wafer to air. A maximum cw power output of 28 mW per facet without facet coatings and a threshold current of 50 mA are accomplished. Fundamental transverse mode operation up to 10 mW and single longitudinal mode above 2.5 mW are demonstrated.

• Research Organization: Research Laboratory, OKI Electric Industry Company, Ltd., Hachioji, Tokyo 193, Japan
• OSTI ID: 5865915
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
EPITAXY
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LIQUID PHASE EPITAXY
OPERATION
OSCILLATION MODES
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING
THRESHOLD CURRENT