CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode

Journal Article · Wed Mar 01 04:00:00 EST 1995 · IEEE Photonics Technology Letters

DOI:https://doi.org/10.1109/68.372734· OSTI ID:46116

Martin, R D; Hunsperger, R G ^[1]; Forohuhar, S; Keo, S; Lang, R J ^[2]; Tiberio, R; Chapman, P ^[3]

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1. Univ. of Delaware, Newark, DE (United States). Dept. of Electrical Engineering
2. California Inst. of Technology, Pasadena, CA (United States)
3. Cornell Univ., Ithaca, NY (United States). National Nanofabrication Facility

Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. The authors demonstrate InGaAs-GaAs-AlGaAs DFB lasers fabricated from a single epitaxial growth using lateral evanescent coupling of the optical field to a surface grating etched along the sides of the ridge. A CW threshold current of 25 mA and external quantum efficiency of 0.48 mW/mA per facet were measured for a 1 mm cavity length device with anti-reflection coated facets. Single-mode output powers as high as 11 mW per facet at 935 nm wavelength were attained. A coupling coefficient of at least 5.8 cm{sup {minus}1} was calculated from the subthreshold spectrum taking into account the 2% residual facet reflectivity.

• OSTI ID: 46116
• Journal Information: IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 3 Vol. 7; ISSN 1041-1135; ISSN IPTLEL
• Country of Publication: United States
• Language: English

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