High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

Journal Article · Mon May 14 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103028· OSTI ID:6813116

Arent, D J; Brovelli, L; Jaeckel, H; Marclay, E; Meier, H P ^[1]

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1. IBM Research Division, Zurich Research Laboratory, 8803 Rueschlikon, Switzerland (CH)

Strained single quantum well InGaAs/AlGaAs graded-index separate confinement heterostructure lasers have been grown by molecular beam epitaxy over nonplanar substrates. In addition to the low threshold currents provided {ital in} {ital situ} by lateral current blocking {ital pn} junctions obtained by plane-dependent doping of the amphoteric Si dopant, we observe variations in lasing wavelength, efficiency, and internal absorption as a function of the central (100) facet length. These variations are associated with increased indium composition in the strained quantum well which arises from incorporation of adatoms migrating from the low-growth (311){ital A} side facets to the preferential growth (100) active area facets. Uncoated devices (750 {mu}m{times}4 {mu}m) have been found to have threshold currents as low as 6 mA ({ital J}{sub th}=320 A/cm{sup 2}) and exhibit single-mode behavior to greater than 100 mW at a wavelength of {similar to}1.0 {mu}m when reflectivity modified (90%/10%).

• OSTI ID: 6813116
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:20; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
MOLECULAR BEAM EPITAXY
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT