Two-stage injection locking of high-power semiconductor arrays

Journal Article · Sun Jul 01 00:00:00 EDT 1990 · Optics Letters; (USA)

DOI:https://doi.org/10.1364/OL.15.000728· OSTI ID:6714783

Pang, L Y; Kintzer, E S ^[1]; Fujimoto, J G ^[2]

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1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 (USA)
2. Department of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (USA)

A new multistage diode-array injection-locking technique is demonstrated. This approach permits higher power extraction or higher overall gain to be achieved than possible with single-stage designs. Using two antireflection-coated 40-stripe multiple-quantum-well diode arrays, we characterize the amplifier small-signal and saturated gain performance. More than 500 mW of power is achieved with single frequency and narrow linewidth in a nearly diffraction-limited far-field lobe. With small-signal inputs, an overall gain of 25 dB with 290-mW locked output is obtained.

• OSTI ID: 6714783
• Journal Information: Optics Letters; (USA), Journal Name: Optics Letters; (USA) Vol. 15:13; ISSN 0146-9592; ISSN OPLED
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
AMPLIFICATION
DESIGN
GAIN
LASERS
POWER RANGE MILLI W
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS