High power, AlGaAs buried heterostructure lasers with flared waveguides

Journal Article · Sun Feb 01 23:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98237· OSTI ID:7040976

Welch, D F; Cross, P S; Scifres, D R; Streifer, W; Burnham, R D

High power, buried heterostructure laser with flared waveguide horns have been grown by a two-step metalorganic chemical vapor deposition process. Powers up to 120 mW cw in a single longitudinal and transverse mode have been obtained from a single stripe laser. The flared waveguides decrease the lateral far-field divergence from 25/sup 0/ to 11/sup 0/ while supporting only the lowest order transverse mode.

• Research Organization: Spectra Diode Laboratories, 3333 North First Street, San Jose, California 95134
• OSTI ID: 7040976
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT
WAVEGUIDES