Properties of AlGaAs buried heterostructure lasers and laser arrays grown by a two-step metalorganic chemical vapor deposition

Journal Article · Mon Jun 23 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97024· OSTI ID:5815593

Welch, D F; Cross, P S; Scifres, D R; Streifer, W; Burnham, R D

High quality buried heterostructure (BH) lasers were grown by a two-step metalorganic chemical vapor deposition. Single stripe BH lasers exhibited thresholds of 20 mA for a 1.2-..mu..m stripe. The spectral output emits in a single transverse and longitudinal mode up to 15 mW, with a side lobe suppression greater than 23 dB at 5 mW output. BH laser arrays were fabricated with threshold currents of 130 mA and differential efficiencies of 70% for a 10-stripe array.

• Research Organization: Spectra Diode Labs, 3333 North First Street, San Jose, California 95134
• OSTI ID: 5815593
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:25; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
PNICTIDES
POWER
POWER RANGE MILLI W
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT
VAPOR DEPOSITED COATINGS