GaAs surface emitting lasers with circular buried heterostructure grown by metalorganic chemical vapor deposition and two-dimensional laser array

Journal Article · Mon Feb 15 00:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99405· OSTI ID:5525558

Koyama, F; Tomomatsu, K; Iga, K

A metalorganic chemical vapor deposition (MOCVD) was used to grow both double-heterostructure wafers and circular buried heterostructures for GaAlAs/GaAs surface emitting lasers. A vertical microcavity was formed with a diameter of 10 ..mu..m and a cavity length of 6 ..mu..m by a two-step MOCVD growth and fully monolithic technology. Threshold currents under room-temperature pulsed conditions ranged from 50 to 100 mA with a minimum of 50 mA. cw operation up to 160 K was obtained. In addition, a densely packed 5 x 5 SE laser array with 20 ..mu..m separation was demonstrated with a minimum threshold of 600 mA.

• Research Organization: Tokyo Institute of Technology, Research Laboratory of Precision Machinery and Electronics, 4259 Nagatsuta, Midori-ku, Yokohama 227, Japan
• OSTI ID: 5525558
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 52:7
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
LASER CAVITIES
OPERATION
THRESHOLD CURRENT
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HETEROJUNCTIONS
VAPOR DEPOSITED COATINGS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
COATINGS
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
420300* - Engineering- Lasers- (-1989)