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Very low threshold planar buried heterostructure InGaAsP/InP laser diodes prepared by three-stage metalorganic chemical vapor deposition

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.98840· OSTI ID:6032295
; ;
Low threshold InGaAsP/InP lasers with planar buried heterostructure were grown entirely by low-pressure metalorganic chemical vapor deposition (MOCVD). The threshold current I/sub th/ = 10 mA and the differential quantum efficiency eta/sub d/ = 60%, which are comparable to lasers grown by liquid phase epitaxy, were obtained. Most lasers randomly selected from one wafer have threshold currents of I/sub th/ = 10--25 mA, because of high thickness uniformity of MOCVD growth. Stable fundamental transverse mode operation was also obtained up to an output power of 40 mW/facet, due to controlling the active layer width less than 2 ..mu..m.
Research Organization:
Opto-electronic Device Department, Matsushita Electronics Corporation, 1, Kohtariyakimachi, Nagaokakyo, Kyoto 617, Japan
OSTI ID:
6032295
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:12; ISSN APPLA
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
DATA
DEPOSITION
EFFICIENCY
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASER RADIATION
LASERS
NUMERICAL DATA
OPERATION
OPTICAL MODES
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OSCILLATION MODES
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STIMULATED EMISSION
SURFACE COATING
THRESHOLD ENERGY
VAPOR DEPOSITED COATINGS