Metalorganic chemical vapor deposition of InGaAsP/InP layers and fabrication of 1. 3-. mu. m planar buried heterostructure lasers

Journal Article · Sat Oct 01 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341411· OSTI ID:6909829

Kawabata, T; Ishiguro, H; Koike, S

High-quality InGaAsP and InP layers were obtained with good surface morphology by low-pressure metalorgainic chemical vapor deposition (MOCVD). The growth apparatus could be relatively simple using trimethylindium (TMI) as indium source. Abrupt heterointerfaces were also obtained and the compositional grading at the interfaces was estimated to be less than 20--30 A owing to the low-pressure growth technique. The selective burying growth on several types of mesas was investigated. The growth rate on the /111/B face was found to be smaller than that on the /111/A and the /100/ face in MOCVD. As a result, very smooth and flat varying layers were obtained when the rectangular mesas were formed along the <110> direction. Using these characteristics, low-threshold 1.3-..mu..m InGaAsP/InP lasers with planar buried heterostructures (PBH) were grown entirely by three-stage MOCVD. The threshold current I/sub th/ = 10 mA and the differential quantum efficiency eta/sub d/ = 60%, which are comparable to lasers grown by liquid-phase epitaxy, were obtained. PBH lasers with multi-quantum-well active layers were also fabricated. Continuous operation with threshold current I/sub th/ = 35 mA was achieved at room temperature.

• Research Organization: Optoelectronic Device Department, Matsushita Electronics Corporation, 1, Kohtari Yakemachi, Nagaokakyo, Kyoto 617, Japan
• OSTI ID: 6909829
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
JUNCTIONS
LASERS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT
VAPOR DEPOSITED COATINGS