Cd diffused mesa-substrate buried heterostructure InGaAsP/InP laser

Journal Article · Fri Feb 15 04:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95620· OSTI ID:6058967

Yi, M B; Lu, L T; Kapon, E; Rav-Noy, Z; Margalit, S; Yariv, A

A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2-..mu..m-wide active region.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 6058967
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM
CURRENTS
DATA
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
LIQUID PHASE EPITAXY
METALS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT