Channeled substrate buried heterostructure InGaAsP/InP laser employing a buried Fe ion implant for current confinement

Journal Article · Wed Feb 01 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94728· OSTI ID:5220529

Wilt, D P; Schwartz, B; Tell, B; Beebe, E D; Nelson, R J

A channeled substrate buried heterostructure InGaAsP/InP laser is demonstrated using a hybrid technique of Fe ion implantation followed by liquid phase epitaxy. A high resistivity region is formed by the implantation and subsequent anneal of Fe into an n-type InP substrate, and this is used to provide a self-aligned current confinement barrier layer. The use of an in situ anneal prior to liquid phase epitaxy minimizes the number of processing steps. Pulsed threshold currents as low as 22 mA have been achieved on devices utilizing broad area metal contacts.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5220529
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEAT TREATMENTS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IONS
IRON IONS
JUNCTIONS
LASERS
LIQUID PHASE EPITAXY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT