V-grooved substrate buried heterostructure InGaAsP/InP laser by one-step epitaxy

Journal Article · Thu Apr 01 04:00:00 EST 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331064· OSTI ID:5610363

Ishikawa, H; Imai, H; Umebu, I; Hori, K; Takusagawa, M

A V-grooved substrate buried heterostructure (VSB) InGaAsP/InP laser by one-step epitaxy emitting at 1.3 ..mu..m wavelength is developed. The one-step epitaxy VSB laser is realized by using Cd diffusion for the formation of the p-InP internal current restriction layer. Efficient current restriction is confirmed in the Cd-diffused current restriction structure to be comparable to that by two-step epitaxy. The VSB laser by one-step epitaxy showed a cw threshold current of about 15 mA at 25 /sup 0/C and a far field pattern as smooth as that of the two-step epitaxy VSB laser. The T/sub 0/ value was 50--60 K below 55 /sup 0/C and was 30 K above 55 /sup 0/C. The threshold current obtained here is the lowest among various InGaAsP/InP lasers by one-step epitaxy.

• Research Organization: Fujitsu Laboratories Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, Japan
• OSTI ID: 5610363
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM
COMPARATIVE EVALUATIONS
CONFIGURATION
CURRENTS
DATA
DIFFUSION
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
MATERIALS
MATHEMATICAL MODELS
METALS
NUMERICAL DATA
P-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SUBSTRATES
THRESHOLD CURRENT
WAVELENGTHS