V-grooved substrate buried heterostructure In GaAsP/InP laser emitting at 1. 3. mu. m wavelength

Journal Article · Fri Oct 01 04:00:00 EDT 1982 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1982.1071392· OSTI ID:5967059

Ishikawa, H; Hori, K L; Inai, H I; Takahei, K T; Tanahashi, T T

Details of the fabrication, optimization of the dimensions of the active region, characteristics, and the aging results of the V-grooved substrate buried heterostructure (VSB) InGaAsP/InP laser are described. It is shown that the VSB laser can be fabricated in one-step epitaxy as well as two-step epitaxy. The active region width below 2.5 ..mu..m and the thickness of 0.15-0.2 ..mu..m are shown to give stable fundamental mode operation and good temperature characteristics. The fundamental mode operation up to the optical output of 20 mW/facet at 25/sup 0/C and the CW operation above 100/sup 0/C are obtained. The pulse response showed the strongly damped relaxation oscillation with a frequency as high as 4.5 GHz. The spectral width under the modulation of 400 Mbit/s RZ single is as narrow as 25 A in full width at half maximum. Highly stable aging characteristics at an elevated temperature of 50/sup 0/C are obtained in both two-step epitaxy lasers and one-step epitaxy lasers.

• Research Organization: Fujitsu Labs., Ltd. Kawasaki, Japan
• OSTI ID: 5967059
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-18:10; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AGING
ARSENIC COMPOUNDS
ARSENIDES
BORON
CONTROL
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LINE WIDTHS
METALS
MODE CONTROL
OPTIMIZATION
OSCILLATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
TEMPERATURE EFFECTS
TRANSITION ELEMENTS
VANADIUM