V-grooved substrate buried heterostructure in GaAsP/InP laser emitting at 1. 3mm wavelength

Journal Article · Fri Oct 01 04:00:00 EDT 1982 · IEEE Trans. Microwave Theory Tech.; (United States)

DOI:https://doi.org/10.1109/TMTT.1982.1131310· OSTI ID:5958765

Ishikawa, H; Hori, K; Imai, H; Takahei, K; Tanahashi, T

Details of the fabrication, optimization of the dimensions of the active region, characteristics, and the aging results of the V-grooved substrate buried heterostructure (VSB) InGaAsP/InP laser are described. It is shown that the VSB laser can be fabricated in one-step epitaxy as well as two-step epitaxy. The active region width below 2.5 ..mu..m and the thickness of 0.15-0.2 ..mu..m are shown to give stable fundamental mode operation and good temperature characteristics. The fundamental mode operation up to the optical output of 20 mW/facet at 25/sup 0/C and the CW operation above 100/sup 0/C are obtained. The pulse response showed the strongly damped relaxation oscillation with a frequency as high as 4.5 GHz. The spectral width under the modulation of 400 Mbit/s RZ single is as narrow as 25 A in full width at half maximum. Highly stable aging characteristics at an elevated temperature of 50/sup 0/C are obtained in both two-step epitaxy lasers and one-step epitaxy lasers.

• Research Organization: Fujitso Lab Ltd.
• OSTI ID: 5958765
• Journal Information: IEEE Trans. Microwave Theory Tech.; (United States), Journal Name: IEEE Trans. Microwave Theory Tech.; (United States) Vol. MTT-30:10; ISSN IETMA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
EPITAXY
FABRICATION
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GHZ RANGE
GHZ RANGE 01-100
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
MEDIUM TEMPERATURE
MODE CONTROL
MODULATION
OPTICAL PROPERTIES
OPTIMIZATION
OSCILLATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
PULSES
RELAXATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRAL RESPONSE
TEMPERATURE EFFECTS
WAVELENGTHS