InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (lambda>1. mu. m) by metalorganic chemical vapor deposition

Journal Article · Mon Feb 06 00:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100935· OSTI ID:6547890

York, P K; Beernink, K J; Fernandez, G E; Coleman, J J

Data are presented on long-wavelength (lambda>1 ..mu..m) strained-layer InGaAs-GaAs quantum well buried heterostructure lasers grown by a two-step metalorganic chemical vapor deposition (MOCVD) process. Wet chemical etched mesas with an active region width of 3.5 ..mu..m are formed in a step-graded InGaAs-GaAs quantum well structure using an oxide mask. Selective MOCVD regrowth is used to form the buried heterostructure. Data are presented for devices having output powers of greater than 130 mW/facet, pulsed threshold currents of less than 7 mA, and internal quantum efficiencies of greater than 60%, for an emission wavelength of 1.074 ..mu..m. The near-field patterns indicate stable index-guided fundamental mode operation to greater than 30I/sub th/.

• Research Organization: Compound Semiconductor Microelectronics Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1406 West Green Street, Urbana, Illinois 61801
• OSTI ID: 6547890
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 54:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
PERFORMANCE
CHEMICAL VAPOR DEPOSITION
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
INDIUM ARSENIDES
INFRARED RADIATION
OPERATION
ORGANOMETALLIC COMPOUNDS
POWER
QUANTUM EFFICIENCY
THRESHOLD CURRENT
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
ORGANIC COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SURFACE COATING
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)