InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (lambda>1. mu. m) by metalorganic chemical vapor deposition
Data are presented on long-wavelength (lambda>1 ..mu..m) strained-layer InGaAs-GaAs quantum well buried heterostructure lasers grown by a two-step metalorganic chemical vapor deposition (MOCVD) process. Wet chemical etched mesas with an active region width of 3.5 ..mu..m are formed in a step-graded InGaAs-GaAs quantum well structure using an oxide mask. Selective MOCVD regrowth is used to form the buried heterostructure. Data are presented for devices having output powers of greater than 130 mW/facet, pulsed threshold currents of less than 7 mA, and internal quantum efficiencies of greater than 60%, for an emission wavelength of 1.074 ..mu..m. The near-field patterns indicate stable index-guided fundamental mode operation to greater than 30I/sub th/.
- Research Organization:
- Compound Semiconductor Microelectronics Laboratory and Materials Research Laboratory, University of Illinois at Urbana--Champaign, 1406 West Green Street, Urbana, Illinois 61801
- OSTI ID:
- 6547890
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:6; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ETCHING
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
INFRARED RADIATION
LASERS
NUMERICAL DATA
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
PNICTIDES
POWER
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
SURFACE FINISHING
THRESHOLD CURRENT