InGaAsP (. lambda. = 1. 3. mu. m) strip buried heterostructure lasers grown by MOCVD

Journal Article · Fri Nov 01 04:00:00 EST 1991 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.100876· OSTI ID:5869185

van der Ziel, J P ^[1]; Logan, R A; Tanbun-Ek, T ^[2]

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1. Erik Jonnson School of Engineering and Computer Science, Univ. of Texas at Dallas, Richardson, TX (US)
2. AT and T Bell Labs., Murray Hill, NJ (United States)

In this paper the characteristics of InGaAsP-InP index guided strip buried heterostructure lasers operating at 1.3 {mu}m with a 1.1 {mu}m guiding layer are described. The effective refractive index approximation is used to obtain the mode and waveguiding characteristics. These layers are compared with buried heterostructure lasers having similar guiding layers under the active layer but terminated at the edge of the active layer. Experimentally, the lasers are grown by a two step atmospheric pressure MOCVD growth procedure, with an initial growth of the guiding, active, cladding, and cap layer by MOCVD, followed by etching into mesa strips down to the guiding layer and recovering the etched regions with a 2 {mu}m thick MOCVD grown InP:Fe current blocking layer. SBH lasers with 0.15 {mu}m thick active layer strips, 5 {mu}m wide, and guide layers varying from 0 to 0.7 {mu}m have threshold currents increasing from 34 to 59 mA, and nearly constant differential external quantum efficiencies of 0.2 mW/mA. The threshold current increases more rapidly with temperature with guide layer thickness, with T{sub 0} decreasing from 70{degrees} C for lasers without a guide layer 54.3{degrees} C for lasers with 0.7 {mu}m thick guide layers. Output powers up to 30 mW per facet have been obtained from 254 {mu}m long lasers and were found to be insensitive to guide layer thickness.

• OSTI ID: 5869185
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 27:11; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DEPOSITION
DIMENSIONS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
JUNCTIONS
LASERS
LAYERS
MEDIUM PRESSURE
NEAR INFRARED RADIATION
OPERATION
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
POWER
RADIATIONS
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
SURFACE COATING
SURFACE FINISHING
TEMPERATURE DEPENDENCE
THICKNESS
THRESHOLD CURRENT