AlGaAs inverted strip buried heterostructure lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
Inverted strip buried heterostructure lasers have been fabricated. These lasers have threshold currents and quantum efficiencies that are comparable to those of conventional buried heterostructure lasers. The optical mode is confined by a weakly guiding strip loaded waveguide which makes possible operation in the fundamental transverse mode for larger stripe widths than is possible for conventional buried heterostructure lasers. Scattering of the laser light by irregularities in the sidewalls of the waveguide, which can be a serious problem in conventional buried heterostructure lasers, is also greatly reduced in these lasers.
- Research Organization:
- California Institute of Technology, Pasadena, California 91125
- OSTI ID:
- 5143802
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:5; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
High power, AlGaAs buried heterostructure lasers with flared waveguides
Implanted-planar-buried-heterostructure, graded-index, separate-confinement-heterostructure laser in GaAs/AlGaAs
Low threshold current Implanted-Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure GaAs-AlGaAs laser
Journal Article
·
Sun Feb 01 23:00:00 EST 1987
· Appl. Phys. Lett.; (United States)
·
OSTI ID:7040976
Implanted-planar-buried-heterostructure, graded-index, separate-confinement-heterostructure laser in GaAs/AlGaAs
Journal Article
·
Sat Jul 01 00:00:00 EDT 1989
· IEEE Photonics Technology Letters; (USA)
·
OSTI ID:5418585
Low threshold current Implanted-Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure GaAs-AlGaAs laser
Conference
·
Sun Dec 31 23:00:00 EST 1989
·
OSTI ID:5088724
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OSCILLATION MODES
PNICTIDES
QUANTUM EFFICIENCY
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
WAVEGUIDES
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OSCILLATION MODES
PNICTIDES
QUANTUM EFFICIENCY
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
WAVEGUIDES