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Reactive sputtered copper indium diselenide films for photovoltaic applications

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.572589· OSTI ID:7034884

Single phase chalcopyrite CuInSe/sub 2/ coatings have been deposited by reactive cosputtering from Cu and In planar magnetron sources operated in an Ar+H/sub 2/Se working gas. Effective sputtering yields from the conditioned Cu and In targets were approximately 0.7 and 0.5 atoms/unit charge, respectively. Sputtering rate, H/sub 2/Se injection rate, and H/sub 2/Se and H/sub 2/ partial pressure measurements were consistent with the overall reaction Cu+In+2H/sub 2/Se..-->..CuInSe/sub 2/+2H/sub 2/. The formation of near-stoichiometric coatings appears to be aided at elevated temperatures by a reemission mechanism which removes excess In. Photovoltaic devices formed by evaporating CdS onto the sputtered CuInSe/sub 2/ yielded short circuit currents of about 33 mA/cm/sup 2/ and efficiencies of about 4%.

Research Organization:
Telic Company, Santa Monica, California 90404
OSTI ID:
7034884
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 2:2; ISSN JVTAD
Country of Publication:
United States
Language:
English