Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals
This patent describes the process of preparing a CuInSe/sub 2/ crystal substantially free of fissures, cracks and contamination from B/sub 2/O/sub 3/ and SiO/sub 2/, the process comprising the steps of: placing stoichiometric quantities of Cu, In, and Se in a refractory quartz crucible; placing a sufficient quantity of B/sub 2/O/sub 3/ in the crucible over the Cu, In, and Se to completely surround the Cu, In, and Se when melted to a liquid and to substantially prevent a reaction between the CuInSe/sub 2/ crystal and the quartz crucible; placing the crucible containing the Cu, In, Se, and B/sub 2/O/sub 3/ in an enclosed chamber; creating an environment of inert gas in the chamber and over the crucible and pressurizing this environment to a pressure substantially above the vapor pressure of Se at a selected operating temperature; heating the crucible and its contents to an operating temperature range of about 1000/sup 0/ to 1100/sup 0/C. to melt the contents of the crucible, and holding this temperature for a sufficient period of time to synthesize and homogenize the CuInSe/sub 2/ melt; inserting a seed crystal of CuInSe/sub 2/ through the B/sub 2/O/sub 3/ surrounding material into contact with the CuInSe/sub 2/ melt; adjusting the temperature of the CuInSe/sub 2/ melt to a temperature at which the CuInSe/sub 2/ crystal structure begins to grow on the seed crystal; and slowly pulling the seed crystal upwardly from the melt at a suitable speed for effecting continuous and complete lattice growth through the sphalerite and chalcopyrite phases of a crystal so as to obtain the CuInSe/sub 2/ crystal substantially free of the fissures, cracks and contamination of B/sub 2/O/sub 3/ and SiO/sub 2/.
- Assignee:
- Dept. of Energy, Washington, DC
- Patent Number(s):
- US 4652332
- Application Number:
- TRN: 87-016671
- OSTI ID:
- 6647740
- Resource Relation:
- Patent File Date: Filed date 29 Nov 1984
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
COPPER SELENIDES
CHEMICAL PREPARATION
CRYSTAL GROWTH
INDIUM SELENIDES
BORON OXIDES
COPPER
CRUCIBLES
INDIUM
INERT ATMOSPHERE
LIQUID METALS
MELTING
PRESSURIZING
QUARTZ
SELENIUM
SILICON OXIDES
STOICHIOMETRY
TEMPERATURE CONTROL
VAPOR PRESSURE
VERY HIGH TEMPERATURE
BORON COMPOUNDS
CHALCOGENIDES
CONTROL
COPPER COMPOUNDS
ELEMENTS
FLUIDS
INDIUM COMPOUNDS
LIQUIDS
METALS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SEMIMETALS
SILICON COMPOUNDS
SYNTHESIS
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
360602* - Other Materials- Structure & Phase Studies
360601 - Other Materials- Preparation & Manufacture