Preparation of CuInSe/sub 2/ films by reactive co-sputtering

Conference · Sun May 01 00:00:00 EDT 1983 · Proc. - Electrochem. Soc.; (United States)

OSTI ID:6803564

Thornton, J A; Cornog, D G; Hall, R B; Meakin, J D; Shea, S P

CuInSe/sub 2/ coatings have been deposited onto glass and alumina substrates by co-sputtering from Cu and In planar magnetron sputtering sources in an Ar and H/sub 2/Se working gas. The coating structure and composition were controlled by the substrate temperature and the relative sputtering fluxes from the two sources. Single phase chalcopyrite coatings with a high degree of 112 preferred orientation were obtained at substrate temperatures in the 350/sup 0/C to 450/sup 0/C range. The formation of near-stoichiometric coatings appears to be aided at elevated temperatures by an evaporation mechanism which removes excess In from the growing coating.

• Research Organization: Telic Company, Santa Monica, CA
• OSTI ID: 6803564
• Report Number(s): CONF-8305161-
• Journal Information: Proc. - Electrochem. Soc.; (United States), Journal Name: Proc. - Electrochem. Soc.; (United States) Vol. 83-11; ISSN PESOD
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHALCOPYRITE
CHEMICAL COMPOSITION
COATINGS
COPPER COMPOUNDS
COPPER SELENIDES
COPPER SULFIDES
FABRICATION
FILMS
GLASS
HIGH TEMPERATURE
HYDROGEN COMPOUNDS
INDIUM COMPOUNDS
INDIUM SELENIDES
IRON COMPOUNDS
IRON SULFIDES
MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SELENIDES
SELENIUM COMPOUNDS
SPUTTERING
SUBSTRATES
SULFIDE MINERALS
SULFIDES
SULFUR COMPOUNDS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS