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An investigation of reactive sputtering for depositing copper indium diselenide films for photovoltaic applications

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:6026175

Sputtering, particularly using magnetron methods, offers great potential for depositing films over large areas at the production volumes required for terrestrial photovoltaic applications. We have successfully deposited single phase chalcopyrite CuInSe/sub 2/ coatings by dc reactive cosputtering from Cu and In planar magnetron sources operated in an Ar+H/sub 2/Se working gas. Studies of coatings deposited with various Cu and In sputtering rates and substrate temperatures indicate that the formation of near-stoichiometric coatings is aided at elevated temperatures by a re-emission mechanism which removes excess In. Photovoltaic test devices formed by evaporating CdS onto the sputtered CuInSe/sub 2/ have yielded short circuit sputtered CuInSe/sub 2/ have yielded short circuit currents of about 33 mA/cm/sup 2/ and efficiencies of about 4%.

Research Organization:
Coordinated Science Laboratory and Department of Metallurgy and Mining Engineering, University of Illinois, Urbana, Illinois
OSTI ID:
6026175
Report Number(s):
CONF-840561-
Journal Information:
Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States); ISSN CRCND
Country of Publication:
United States
Language:
English